Johnny C. Ho, Ph.D.
Department of Physics and Materials Science,
City University of Hong Kong
Tat Chee Avenue,
Hong Kong SAR, China.
Dr. Johnny Ho
obtained his B.S. in chemical engineering with high honors
from the University of California at Berkeley in 2002. Before
attending graduate school, he worked as a process engineer at
National Semiconductor in Silicon Valley. He then received his
M.S. and Ph.D. in materials science and engineering from the
University of California at Berkeley in 2005 and 2009,
respectively, specializing in the topic of design of
nano-materials for next-generation electronics under the
supervision of Professor Ali Javey in electrical engineering.
Before beginning his academic position at City University of
Hong Kong, he performed studies on energy-harvesting devices
as a post-doctoral fellow at Lawrence Livermore National
Laboratory, California. His research interest is highly
interdisciplinary involving chemistry, physics, materials
science and various engineering disciplines to explore novel
nano-materials and nano-engineering techniques for
| Research Interests:
Assisted Nano-Scale Processing
Device scaling has
been the driving force for technology advancements in the
semiconductor industry over the last few decades. This scaling
presents a tremendous challenge to fabricate nano-scale devices
controllably and cost-effectively. In this regard, we aim to
explore the manipulation of the surface properties of
semiconductor nanostructures to enable alternative and novel
nano-scale device fabrication schemes.
- Synthesis and
Characterization of Fundamental Properties of Nano-Materials
nano-materials have attracted a large amount of research attention
due to the unique physical properties of materials at the
nano-scale. We are interested in developing new synthesis
techniques to enable new functionalities of nano-materials. At the
same time, it is essential to study and understand the fundamental
properties of the materials in order to tailor them for
Large-Scale and Heterogeneous Integration of Nano-Materials for
Flexible and High Performance Technological Applications
amazing properties of nano-materials such as nanowires (NW) have
been reported, the controlled
and uniform assembly of ¡§bottom-up¡¨ NW materials with high
scalability is still one of the significant bottleneck challenges
to integrate NWs for practical technological applications. In this
regard, we have achieved a high throughput and generic
printing approach to assemble NWs on any substrate including Si,
plastics, paper, and glass. With this approach,
nano-materials based electronic, energy-harvesting, photonic and
sensor applications will
| Selected Publications:
"Nanowire active matrix circuitry for
low-voltage macro-scale artificial skin",
9, 821-826, 2010.
Ford A.C., Leu P.W., Chueh Y.L., Javey A.
¡§Formation of Ultra-Shallow Junctions in
Indium Arsenide with Monolayer Doping¡¨,
Applied Physics Letter,
95, 072108, 2009.
Z., Razavi H., Do J.W., Moriwaki A., Ergen
O., Chueh Y.L., Leu P.W.,
Takahashi T., Reichertz L.A., Brown G.F.,
Neale S., Yu K., Wu M., Ager J.W., Wu J.,
Javey A. ¡§Three Dimensional Nanopillar Array
Photovoltaics on Low Cost and Flexible
8, 648-653, 2009.
Takahashi T., Yerushalmi R., Takei K., Chueh
Y.L., Javey A. ¡§Towards the Development of
Printable Nanowire Electronics and Sensors¡¨,
21, 3730-3743, 2009.
Yerushalmi R., Smith G., Majhi P., Bennett
J., Halim J., Faifer V.N.,
¡§Wafer-Scale, Sub-5 nm Junction Formation by
Monolayer Doping and Conventional Spike
9, 725¡V730, 2009.
Chueh Y.L.*, Tseng Y.C., Fan Z., Guo J.,
Bokor J., Javey A. ¡§Diameter-Dependent
Electron Mobility of InAs Nanowires¡¨,
9, 360-365, 2009.
Jacobson Z., Razavi H., Javey A. ¡§Large
Scale, Heterogeneous Integration of Nanowire
Arrays for Image Sensor Circuitry¡¨,
the National Academy of Sciences (PNAS),
105, 11066-11070, 2008.
Yerushalmi R.*, Jacobson Z.A., Fan Z., Alley
R.L., Javey A. ¡§Controlled Nanoscale Doping
of Semiconductors via Molecular Monolayers¡¨,
7, 62-67, 2008.
Jacobson Z.A., Yerushalmi R., Alley R.L.,
Razavi H., Javey A. "Wafer-Scale Assembly of
Highly Ordered Semiconductor Nanowire Array
by Contact Printing",
8, 20-25, 2008.
Specht P., Yang Q., Xu X., Hao D., Weber
E.R. ¡§Effects of Stoichiometry on
Electrical, Optical, and Structural
Properties of Indium Nitride¡¨,
98, 93712-1-5 (2005).
Foundation Ph.D. Fellowship, U.S.A. (2007 ¡V 2009)
Openings (Postdoctoral Fellow, Graduate Student, Research Assistant
the nature of our research programs is highly
interdisciplinary, bridging chemistry, physics,
materials science and various engineering disciplines,
all the lab members will have the opportunities to be
exposed to and master a broad spectrum of fundamental
and technical knowledge in the synthesis,
characterization, assembly, device fabrication and
integration of nanostructured materials for
technological applications. Students will also learn
project management and presentation proficiency. This
skill set is essential for future success in both the
academic and industrial environments. All talented and
enthusiastic individuals with strong academic
backgrounds are encouraged to apply.
Interested applicants should send their CV via emails to
Ho Research Group for Nano-Materials and